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| DMN3051L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features * Low On-Resistance: RDS(ON) < 38m @ VGS = 10V, ID = 5.8A RDS(ON) < 64m @ VGS = 4.5V, ID = 5.0A Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT-23 Mechanical Data * * * * * * * * Case: SOT-23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) Drain NEW PRODUCT * * * * * * * D Gate Source G TOP VIEW S TOP VIEW Equivalent Circuit Maximum Ratings Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) @TA = 25C unless otherwise specified Symbol VDSS VGSS TA = 25C TA = 70C Pulsed ID IDM IS Value 30 20 5.8 4.9 20 2.0 Unit V V A A A Characteristic Drain Current (Note 1) Body-Diode Continuous Current (Note 1) Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient @TA = 25C (Note 1) Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Value 1.4 90 -55 to +150 Unit W C/W C Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 1. 2. 3. 4. @TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS Min 30 Typ Max 800 80 800 2.2 38 64 Unit V nA nA Test Condition VGS = 0V, ID = 250A VDS = 28V, VGS = 0V VGS = 12V, VDS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 5.0A VDS = 5V, ID = 3.1A VGS = 0V, IS = 2.0A VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss 1.3 1.9 33 54 5 0.78 424 115 81 V m S V pF pF pF 1.16 VDS = 5V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. t 5 sec. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMN3051L Document number: DS31347 Rev. 3 - 2 1 of 4 www.diodes.com June 2008 (c) Diodes Incorporated DMN3051L 9.0 8.0 ID, DRAIN CURRENT (A) 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 3 VGS = 2.5V VGS = 1.8V VGS = 3.0V VGS = 10V 6 5 ID, DRAIN CURRENT (A) VGS = 4.5V VDS = 5V 4 NEW PRODUCT 3 2 TA = 150C TA = 125C 1 TA = 85C TA = 25C TA = -55C 0 1.5 2.5 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 3.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0 1 2 3 4 5 ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 6 VGS = 10V VGS = 4.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.1 0.10 0.09 TA = 150C 0.08 0.07 0.06 T A = 125C TA = 85C T A = 25C 0.05 0.04 0.03 0 2 3 4 5 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 1 6 TA = -55C 1.6 1.5 RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.4 C, CAPACITANCE (pF) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Capacitance 30 VGS = 10V ID = 5.8A Ciss VGS = 4.5V ID = 5A Coss Crss DMN3051L Document number: DS31347 Rev. 3 - 2 2 of 4 www.diodes.com June 2008 (c) Diodes Incorporated DMN3051L 3 VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.5 10 ID = 250A 1 IS, SOURCE CURRENT (A) T A = 150C 2 0.1 TA = 125C TA = 85C NEW PRODUCT 1.5 0.01 T A = 25C T A = -55C 1 0.5 0.001 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0 -50 0.0001 0.1 0.3 0.5 0.7 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.1 0.1 D = 0.1 D = 0.05 D = 0.9 RJA(t) = r(t) * RJA RJA = 105C/W P(pk) D = 0.02 0.01 D = 0.01 D = 0.005 t1 D = Single Pulse t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 9 Transient Thermal Response 10 100 1,000 Ordering Information Part Number DMN3051L-7 Notes: (Note 5) Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 3N5 = Product Type Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September 3N5 Date Code Key Year Code Month Code 2007 U Jan 1 Feb 2 2008 V Mar 3 2009 W Apr 4 YM 2010 X May 5 Jun 6 2011 Y Jul 7 2012 Z Aug 8 2013 A Sep 9 Oct O 2014 B Nov N 2015 C Dec D DMN3051L Document number: DS31347 Rev. 3 - 2 3 of 4 www.diodes.com June 2008 (c) Diodes Incorporated DMN3051L Package Outline Dimensions A BC NEW PRODUCT G H K M J D F L SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 F 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 0 8 All Dimensions in mm Suggested Pad Layout Y Z C Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN3051L Document number: DS31347 Rev. 3 - 2 4 of 4 www.diodes.com June 2008 (c) Diodes Incorporated |
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